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Structures and Devices based on Boron Nitride

Invention Title: A novel method of producing hBN semiconducting deep ultraviolet (DUV) photonic materials. Executive Summary: The present invention relates to the production of hexagonal boron nitride (hBN) semiconducting materials and devices. This novel technology has two foreseen applications; 1) Deep ultraviolet light emitting devices and...

Published: 7/31/2018 | Inventor(s): Jingyu Lin, Hongxing Jiang

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Category(s): Nanotechnology